SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To manufacture a semiconductor device where heat detectors can be disposed at high density by a method having superior in matching with a silicon mass-production process. SOLUTION: This semiconductor device includes a silicon substrate 10, a heat-insulating layer including a silicon oxidation film 1 and a heat detector 8. The heat-insulating layer has a hollow 5 or a hole 4, whose inside diameter is larger than that of its opening. At least part of the hollow or the hole is formed in the silicon oxidation film 1. The heat-insulating layer can be formed by forming a hole in a silicon polycrystalline film 3 and a silicon oxidation film 1 through dry etching, oxidizing at least a portion brought into contact with the opening of the hole 4 in the silicon polycrystalline film 3 and blocking the opening to form a hollow 5 or making the diameter of the opening smaller than the inside diameter.