| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser which has superior oscillation characteristic by turning a part which is turned into N-type with Si which is deposited on a regrowth interface, captured in crystal and activated, turned into a P-type with Zn of high concentration, and eliminating a high resistance layer which is formed by N-type turning, and has an optical module and an optical communication system. SOLUTION: A mask pattern, formed of an oxide film for selective MOVPE growth, is formed on InP. Selective MOVPE growth is conducted, by using a patterning substrate, and an active layer and an optical waveguide layer are formed directly. An oxide film is formed only on a mesa top which is selectively grown by a self alignment process, and a current block layer is grown. After the oxide film is eliminated, a P-clad layer is grown. However, in this case, Si of high concentration is deposited on the P-clad layer and a P-clad layer interface directly below the oxide film, these layers are turned into N-type, positive holes which flowed into a P-block layer are injected effectively into the active layer, and a semiconductor laser having superior oscillation characteristic can be realized.
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