| 摘要 |
PROBLEM TO BE SOLVED: To make an oxide anti-ferromagnetic film thinner while its high switched connection bonding property is kept in a switched connection bonding film consisting of a ferromagnetic film and the oxide anti-ferromagnetic film. SOLUTION: An oxide anti-ferromagnetic film 102 is formed by disposing ZnO as a base film and by successively laminating NiO as an anti-ferromagnetic film 2 and Fe2O3 as an anti-ferromagnetic film 3 on the ZnO. A ferromagnetic film 101 is formed on the oxide anti-ferromagnetic film 102 to form the switched connection bonding film.
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