| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which the failure of a dummy cell or a dummy word line can be detected and productivity is improved. SOLUTION: In a semiconductor memory provided with a memory cell array having actual use cells 7, 9 used for storing data and a dummy cell 8 provided for adjusting level differences between surrounding circuits, the device is provided with a first word line driver 12 for applying the prescribed voltage to a dummy word line DWL connected to a dummy cell 8 at the time of defect detection and a second word line driver 13 for applying the prescribed voltage to word lines WL, SWL connected to the actual use cells 7, 9 at the time of detecting defect. The first word line driver 12 applies, to the dummy word line DWL, a voltage being different from the voltage applied by the second word line driver 13. |
