发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR WAFER WITH ANISOTROPIC CONDUCTIVE FILM
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of efficiently manufacturing a semiconductor wafer with an anisotropic conductive film kept at high quality. SOLUTION: An anisotropic conductive film (ACF) 2 is superposed on the circuit surface and/or the rear of a semiconductor wafer 1, leaving the outer peripheral edge of the wafer 1 exposed as a margin 1s so as to be pasted up. Furthermore, a releasable adhesive film 3 is superposed covering ACF 2, and the margin 1s, the wafer 1, the ACF 2, and the adhesive film 3 are pasted together and thermocompressed, to bond the semiconductor wafer 1 and the ACF together for the formation of a semiconductor wafer with an ACF. A releasable adhesive film can be also used in common as a dicing adhesive film.</p>
申请公布号 JP2001210610(A) 申请公布日期 2001.08.03
申请号 JP20000018975 申请日期 2000.01.27
申请人 NITTO DENKO CORP 发明人 YAMAGUCHI YOSHIO;ASAI FUMITERU;HOTTA YUJI
分类号 H01L21/683;H01L21/301;H01L21/60;H01L21/68;(IPC1-7):H01L21/301 主分类号 H01L21/683
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