发明名称 BUMP-FORMING APPARATUS FOR CHARGED SEMICONDUCTOR SUBSTRATE, DESTATICIZING METHOD FOR CHARGED SEMICONDUCTOR SUBSTRATE, DESTATICIZER FOR CHARGED SEMICONDUCTOR SUBSTRATE, AND CHARGED SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a bump-forming apparatus, which can prevent a charged semiconductor substrate from being broken down and physically damaged, pyroelectrically, a destaticizing method for a charged semiconductor substrate executed by the bump forming apparatus, and a destaticizer for a charged semiconductor substrate. SOLUTION: Before a wafer 202 which gas undergone bump bonding is cooled, this wafer is mounted on an aluminum plate 173 to ground charges arising in the wafer during cooling through the aluminum plate; therefore pyroelectric breakdown of the wafer, as well as damages such as cracks of the wafer itself can be prevented.
申请公布号 JP2001210664(A) 申请公布日期 2001.08.03
申请号 JP20000184467 申请日期 2000.06.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NARITA MASACHIKA;TSUBOI YASUTAKA;IKETANI MASAHIKO;MAE TAKAHARU;KANAYAMA SHINJI
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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