| 摘要 |
PROBLEM TO BE SOLVED: To provide highly reliable semiconductor device, without nonconformities such as the disconnection of wiring due to the retention and scattering of slurry that is used in the CMP method. SOLUTION: An interlayer insulation film 21 is formed on a substrate 1, and a polysilicon layer 10 is formed on the interlayer insulation film 21. An interlayer insulation film 22 is formed, while the polysilicon layer 10 is covered, and a polysilicon layer 11 is formed on the interlayer insulation film 22. An interlayer insulation film 23 is formed, while the interlayer insulation film 22 is covered. A marking hole 20M for forming an alignment mark or the like is formed from a surface 23S of the interlayer insulation film 23 to the polysilicon layer 11. Although the marking hole 20M is wider than an contact hole reaching the substrate 1 from the surface 23S, the marking hole 20M is shallower than the contact hole. As a result, since a recessed part corresponding to the making hole 20M cannot be formed easily on the silicon oxide layer, that is to become an interlayer insulation film 4 after being subjected to CMP polishing, retention of slurry at the recessed part can be suppressed. |
