发明名称 HIGH FREQUENCY SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a high frequency semiconductor device which realizes the multi-chip mounting intended to reduce the number of parts and miniaturize the device and has good high frequency characteristics at a low manufacturing cost. SOLUTION: The high frequency semiconductor device is such that a plurality of mounting parts with electrode wirings 111-113, 121-123 to which electrodes of a plurality of high frequency circuit elements are electrically connected is provided on the upside of a dielectric board 1, high frequency semiconductor circuit elements 41, 42 are mounted on each mounting part to electrically connect their electrodes to the electrode wirings 111-113, 121-123, a dielectric cover 2 having a plurality of recesses 31, 32 corresponding to the mounting parts on the downside and connection wirings 201-203 formed between the recesses 31, 32 is mounted on the dielectric board 1 to house the high frequency semiconductor elements 41, 42 in the recesses 31, 32 every mounting part, and the electrode wirings 111-113, 121-123 between the mounting parts are mutually electrically connected through the connection wirings 201-203.
申请公布号 JP2001210752(A) 申请公布日期 2001.08.03
申请号 JP20000024762 申请日期 2000.01.28
申请人 KYOCERA CORP 发明人 MAETANI MAROAKI
分类号 H01L23/12;H01L23/02;H01L25/04;H01L25/18;(IPC1-7):H01L23/12 主分类号 H01L23/12
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