| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor thin film, which can conduct inactive processing and cleaning processing, on an exposed part in the p-n junction face of the semiconductor thin film in a short time at a room temperature and has the characteristic in withstand voltage of high productivity. SOLUTION: A second conductive SiGe film is laminated on a first conductive Si substrate. The p-n junction face is exposed by etching. A laminated body in a state where the p-n junction face is exposed is irradiated with an ultraviolet ray and the cleaning processing and the inactive processing are conducted.
|
