| 摘要 |
PROBLEM TO BE SOLVED: To provide the simple manufacturing method of the field effect transistor(FET) of a short gate, which uses a compound semiconductor. SOLUTION: An active layer 2 and a contact layer 3 of a first conductive compound semiconductor layer are eptaxially grown sequentially on the substrate 1 of semi-insulation property, which is formed of a compound semiconductor material. Then, a recess 4 is formed. A surface-reforming layer 5 is formed on the surface of the active layer 2 and the contact layer 3. The surface- reforming layer 5 is opened by an electron beam 12. A lower gate electrode 7 is selectively grown in an opening part 6, in a columnar shape with the surface reforming layer 5 as a mask. An insulating film 13 is deposited and planarized. The upper end of the lower gate electrode 7 is exposed. An upper gate electrode 8 connected to the upper end is formed, and an opening extending to the contact layer 3 is formed in the insulating film 13. An ohmic electrode is formed in an opening part 10, and FET is manufactured.
|
