发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a technology for salvaging products with less margin as well as for reducing defects after mounting. SOLUTION: To salvage products with less margin by trimming the level of the internal voltage based on discrimination result of first discriminating means (21-23). It is judged whether the internal voltage is within a tolerable range after trimming by the trimming means (16-18). A control means (29) forcedly forms a defective state by losing a part of intrinsic function of a chip based on the discrimination result of second discriminating means (21-23). Thus, a chip which is not salvaged by trimming is forcedly made defective before mounting, for reduced defects after mounting.
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申请公布号 |
JP2001210790(A) |
申请公布日期 |
2001.08.03 |
申请号 |
JP20000017774 |
申请日期 |
2000.01.21 |
申请人 |
HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD |
发明人 |
OSAKABE TOSHIAKI |
分类号 |
H01L27/04;H01L21/822;(IPC1-7):H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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