发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a technology for salvaging products with less margin as well as for reducing defects after mounting. SOLUTION: To salvage products with less margin by trimming the level of the internal voltage based on discrimination result of first discriminating means (21-23). It is judged whether the internal voltage is within a tolerable range after trimming by the trimming means (16-18). A control means (29) forcedly forms a defective state by losing a part of intrinsic function of a chip based on the discrimination result of second discriminating means (21-23). Thus, a chip which is not salvaged by trimming is forcedly made defective before mounting, for reduced defects after mounting.
申请公布号 JP2001210790(A) 申请公布日期 2001.08.03
申请号 JP20000017774 申请日期 2000.01.21
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 OSAKABE TOSHIAKI
分类号 H01L27/04;H01L21/822;(IPC1-7):H01L27/04 主分类号 H01L27/04
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