| 摘要 |
PROBLEM TO BE SOLVED: To provide a lithography method for forming a new pattern of submicron order, a masking material and a resist material thereof. SOLUTION: A method includes the steps of 1) forming a material as a masking film 1, of which the threshold level of field emission varies, as a result of a property variation while receiving irradiation of an electron beam or injection of a tunneling current, 2) drawing a prescribed pattern on the masking film formed by an electron beam, so that the threshold level of field emission varies, 3) forming a material of which the property varies by field emission as a resist film 3 on a semiconductor substrate, 4) putting the masking film on the resist film, 5) transcribing the variation in properties corresponding to the pattern of the masking film to the resist film by making a field emission partially generated by putting voltage between the masking film 1 and the resist film 3, and 6) partially removing the resist film, depending on a variation of these properties. |
