| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor structure for a semiconductor device which does not degrade by hydrogen or contamination. SOLUTION: A capacitor structure (125 of figure 1) comprises a lower electrode (124 of Fig. 1) provided with a side surface and an upper front surface, a capacitor dielectric (126 of Fig. 1) which, comprising an upper front surface and a side surface, is provided on the upper front surface of the lower electrode having such electric characteristics as to degrade by hydrogen, provided with upper electrodes (128 and 130 of Fig. 1) which comprise an upper front surface and side surface and provided on the capacitor dielectrics, a silicon nitride layer (120 of Fig. 1) provided on the side surface of capacitor dielectrics, and an aluminum oxide layer (118 of Fig. 1) provided between the side surface of capacitor dielectrics and silicon nitride layer. |
