发明名称 BOARD ON WHICH AT LEAST TWO METAL STRUCTURES ARE ARRANGED AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a board on which at least two metal structures that can be manufactured through a damascene process with small capacitance. SOLUTION: A first insulating layer is arranged on a board, and a second insulating layer formed of metal different form the material of the first insulating layer is formed on the first insulating layer. A cavity is provided inside the first insulating layer, covered with the second insulating layer, and demarcated with a part of the first insulating layer against the board. Metal structures are arranged separate from each other by a certain space, and the upper horizontal surfaces of the metal structures are flush with the upper horizontal surface of the second insulting layer. At least, the cavity is characteristically arranged between the two metal structures so as not to come into contact with the metal structures arranged on the board.</p>
申请公布号 JP2001210715(A) 申请公布日期 2001.08.03
申请号 JP20000363142 申请日期 2000.11.29
申请人 INFINEON TECHNOLOGIES AG 发明人 SCHWARZL SIEGFRIED;PAMLER WERNER;GABRIC ZVONIMIR
分类号 H01L21/302;H01L21/304;H01L21/3065;H01L21/768;H01L23/522;H05K1/02;(IPC1-7):H01L21/768;H01L21/306 主分类号 H01L21/302
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