| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device having superior laser characteristics. SOLUTION: This semiconductor laser device comprises a trapezoidal ridge part 10, a clad layer 12 and a contact layer 14, which are laminated on a pair of the current constriction layers 11, 11 and the ridge part 10 in this order. The ridge part 10 comprises a clad layer 4, an active layer 5 and a clad layer 6, which are laminated on a substrate 2 in the order, and a clad layer 8 which is clamped by a pair of current constriction layers 11, 11 on the clad layer 6. Total width of the clad layers 6, 8, 12 is set so that light confinement effect is obtained. The ridge part 10 has a shape, where the width of an upper end 10A approximates the width of a lower end 10B.
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