发明名称 ELECTRIC FIELD EMISSION TYPE ELECTRON SOURCE
摘要 <p>PROBLEM TO BE SOLVED: To provide an electric field emission type electron source which can obtain larger emission current than prior arts. SOLUTION: A plurality of first wirings 21 are formed in the form of stripe on the surface of an insulation substrate 11 composed of a glass substrate, and non-doped polycrystalline silicon layers 3 are formed on the surface of an insulation substrate 11 to cover all first wirings 21, and strong electric field drift layers 6 composed of oxidized porous polycrystalline silicon are formed in an overlapped area with the first wiring 21 of the polycrystalline silicon layers 3 to be separated from the first wiring 21. Each surface electrode 7 is formed in the form extending to the plurality of the strong electric field drift layers 6 and to the polycrystalline silicon layers 3 interposed between the strong electric field drift layers 6. Each wiring 21 comprises an electric conductive layer 8, and an n-type polycrystalline silicon layer 9, which contacts the electric conductive layer 8 and is a low resistance semiconductor layer formed on the electric conductive layer 8.</p>
申请公布号 JP2001210220(A) 申请公布日期 2001.08.03
申请号 JP20000016389 申请日期 2000.01.26
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 HONDA YOSHIAKI;AIZAWA KOICHI
分类号 H01J29/04;H01J1/304;H01J1/312;H01J31/12;(IPC1-7):H01J1/304 主分类号 H01J29/04
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