| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING IT |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device. SOLUTION: This highly reliable semiconductor device is constituted in such a way that metallic films are caused to be deposited on the side face and top face of gate wiring by electroplating in a GOLD structure in which the metallic films are superposed upon an LDD area through a gate insulating film.</p> |
| 申请公布号 |
JP2001210833(A) |
申请公布日期 |
2001.08.03 |
| 申请号 |
JP20000350612 |
申请日期 |
2000.11.17 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
MAEKAWA SHINJI;NAKAZAWA MISAKO |
| 分类号 |
G02F1/136;G02F1/1368;G09F9/30;H01L21/20;H01L21/3205;H01L21/336;H01L21/8238;H01L23/52;H01L27/08;H01L27/092;H01L27/32;H01L29/423;H01L29/43;H01L29/49;H01L29/786;(IPC1-7):H01L29/786;H01L21/320;H01L21/823 |
主分类号 |
G02F1/136 |
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