| 摘要 |
PROBLEM TO BE SOLVED: To suppress pattern defects due to deposits, when patterning a ground layer such as a wiring layer, where a titanium nitride layer is provided at the uppermost part using a hard mask. SOLUTION: A ground layer where the uppermost part, such as a metal lamination film 20 that is composed of a titanium nitride film 12, an aluminum film 13, and a titanium nitride film 14 is composed of the titanium nitride film, and an insulation film such as a silicon oxide film 15 are formed, and a resist pattern 17 is formed on it. Although a deposit 18 that is made of reaction products between titanium and fluorine is generated, when forming the hard mask 17 by patterning the insulation film, washing is made by using washing liquid containing an inorganic acid which contains no fluorine, thus removing a deposit 19 and at the same time, suppressing the generation of a new deposit at the time of washing. Then, when the metal lamination film 20 is etched by the hard mask 17, a metal wiring pattern 19 having few pattern defects can be obtained.
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