| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of an epitaxial silicon wafer for improving the uniformity in crystal structure, without making OSF rings to form on a single-crystal silicon wafer substrate, removing a metal contaminant in a silicon epitaxial layer, reducing the manufacturing time of the epitaxial silicon wafer, and hence reducing production unit costs. SOLUTION: A stage for growing a single-crystal silicon ingot 55 by adjusting the suction speed of a seed crystal 53 and the cooling speed of the single-crystal silicon ingot 55, a stage for manufacturing a single-crystal silicon wafer substrate 100 by performing slicing, lapping, and polishing treatment of the single- crystal silicon ingot 55, a stage for performing hydrogen heat treatment by cleaning the single-crystal silicon wafer substrate 100, and a stage for forming a silicon epitaxial layer 200 on the upper surface of the single-crystal silicon wafer substrate 100 that has been subjected to hydrogen heat treatment, are included in the manufacturing process.
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