| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that it is hard to utilize Ru as a lower electrode of a capacitor of a three-dimensional structure since fine working is difficult for Ru, especially in the structure of an electrode of a semiconductor capacity memory device and to provide a formation method therefor. SOLUTION: After a film-formation preventing film 4 is deposited on an inter-layer insulating film 3, the film 3 is so worked as to have a three- dimensional structure provided with a cylindrical opening part, using the film 4 as a mask. Then, when an Ru film 5 is deposited as a lower electrode using chemical vapor growth method under a condition where base-material selectivity is caused, the Ru film 5 is not deposited on the film-formation preventing film 4, and it is formed only in a desired region. Continuously, insulating is performed by selective oxidation if the film-formation preventing film 4 is conductive, and a dielectric substance 6 and an upper electrode 7 are deposited in this order. Thereby the capacitor of the three-dimensional structure in which the capacitors are separated electrically from each other is realized without a process of fine working of Ru by dry-etching or the like. |
