| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a capacitor of a semiconductor device wherein an excellent electric characteristics and large capacitance are assured while impurities are removed for a quality high-dielectric film, with a simpler manufacturing process at a reduced production cost. SOLUTION: A lower electrode is formed on a lower structure body of a semiconductor substrate, and an amorphous TaON thin film is vapor-deposited above the lower electrode before annealing in an NH3 atmosphere. The process is performed at least once to form a TaON dielectric film of multilayer structure, over which an upper electrode is formed. |
