发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a flat panel display having sophisticated functions. SOLUTION: A system having an active matrix type display mounted with a CPU and a memory is manufactured with a thin-film transistor. A crystal silicon film of a thinfilm transistor causes crystallization by means of treating an amorphous silicon, in which the elements for promoting crystallization of an amorphous silicon are introduced by heat at a higher temperature, at a range of 450 deg.C-650 deg.C in an oxidizing atmosphere.
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申请公布号 |
JP2001210592(A) |
申请公布日期 |
2001.08.03 |
申请号 |
JP20000389693 |
申请日期 |
2000.12.22 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
MIYANAGA SHOJI;OTANI HISASHI;TAKEMURA YASUHIKO |
分类号 |
H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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