发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a flat panel display having sophisticated functions. SOLUTION: A system having an active matrix type display mounted with a CPU and a memory is manufactured with a thin-film transistor. A crystal silicon film of a thinfilm transistor causes crystallization by means of treating an amorphous silicon, in which the elements for promoting crystallization of an amorphous silicon are introduced by heat at a higher temperature, at a range of 450 deg.C-650 deg.C in an oxidizing atmosphere.
申请公布号 JP2001210592(A) 申请公布日期 2001.08.03
申请号 JP20000389693 申请日期 2000.12.22
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MIYANAGA SHOJI;OTANI HISASHI;TAKEMURA YASUHIKO
分类号 H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 主分类号 H01L21/20
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