| 摘要 |
PROBLEM TO BE SOLVED: To prevent malfunctioning in circuit operation caused by losing mutual electrical connection between N- and P-type gate electrodes in a semiconductor device with dual-gate structure. SOLUTION: In this semiconductor device, N- and P-type gate electrode parts 3 and 4 are formed. In this case, N-type impurities are introduced to a gate electrode in an N-channel transistor region of at least one continuous gate electrode at the N-type gate electrode part 3, and the P-type impurities are introduced to a gate electrode in a P-channel transistor region at P-type gate electrode part 4. Also, in this semiconductor device, a contact 11 with width Y larger than width X of a high-resistance region 5 is formed, a high- melt-point metal such as tungsten, the silicide, or wiring materials such as A1 and Cu are buried into the contact, thus maintaining connection by metal in the contact even when a metal silicide layer 9 is burned out by heat treatment or the like on the high-resistance region 5 in the boundary between the N- and P-gate electrode.
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