Silizium-Germanium-Bipolartranistor mit optimiertem Germaniumprofil

摘要

The invention relates to a silicon/germanium bipolar transistor, wherein a first n doped emitter region (1) and a second subsequent p doped base region and a third subsequent n doped collector region are formed in a silicon substrate (7). A first space charge region (4) is formed between the emitter region (1) and the base region (2). A second space charge region (5) is formed between the base region (2) and a collector region (3). The base region (2) and the edge region of the bordering emitter region (1) is alloyed with germanium. The concentration of germanium increases in the emitter region (1) leading towards the base region (2). The concentration of germanium in a transition area in which the first space charge zone (4) is located increases to a lesser degree than in the emitter region (1) or even decreases. The concentration of germanium in the base region (2) increases to a greater degree than in the transition region.