LIGHT EMITTING DIODE AND SEMICONDUCTOR LASER

摘要

It has been confirmed that an n type ZnO film formed on an SrCu2O2 film will produce diode characteristics, without light emitting from a diode confirmed . A semiconductor ultraviolet luminous element characterized by comprising a p -n junction formed by laminating one of p-type semiconductors, respectively consisting of SrCu2O2, CuAlO2 or CuGaO2, on an n-type ZnO layer laminated on a transparent substrate and indicating luminous characteristics. The transpare nt substrate is preferably a single crystal substrate, especially, yttria partially stabilized zirconia (YSZ) (111) substrate flattened in an atomic state. An n-type ZnO film is formed on a transparent substrate at a substrat e temperature of 200-1200~C, and a p-type semiconductor layer consisting of SrCu2O2, CuAlO2 or CuGaO2 is further formed on the film. It may also be possible to form an n-type ZnO film, without heating a substrate, and irradiate the surface of the ZnO film with ultraviolet light to promote crystallization.