发明名称 Resist pattern and method of forming same, method of forming thin-film pattern, and method of manufacturing micro device
摘要 A resist pattern includes: an upper layer pattern made of a resist; and a lower layer pattern made of a material being soluble in a developer used for forming the upper layer pattern. The upper layer pattern extends over a portion corresponding to a thin-film pattern to be formed and other portions while the lower layer pattern is formed only in the other portions. The lower layer pattern may be made of polymethylglutarimide with or without a dye. The thin-film pattern is formed through any of an etching method, a liftoff method, and a method utilizing both etching and liftoff methods.
申请公布号 US2001010885(A1) 申请公布日期 2001.08.02
申请号 US20010770195 申请日期 2001.01.29
申请人 TDK CORPORATION 发明人 KAMIJIMA AKIFUMI
分类号 H01L21/027;G03F7/09;G03F7/11;G03F7/26;G11B5/31;G11B5/39;(IPC1-7):G03F7/26 主分类号 H01L21/027
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