发明名称 |
Resist pattern and method of forming same, method of forming thin-film pattern, and method of manufacturing micro device |
摘要 |
A resist pattern includes: an upper layer pattern made of a resist; and a lower layer pattern made of a material being soluble in a developer used for forming the upper layer pattern. The upper layer pattern extends over a portion corresponding to a thin-film pattern to be formed and other portions while the lower layer pattern is formed only in the other portions. The lower layer pattern may be made of polymethylglutarimide with or without a dye. The thin-film pattern is formed through any of an etching method, a liftoff method, and a method utilizing both etching and liftoff methods.
|
申请公布号 |
US2001010885(A1) |
申请公布日期 |
2001.08.02 |
申请号 |
US20010770195 |
申请日期 |
2001.01.29 |
申请人 |
TDK CORPORATION |
发明人 |
KAMIJIMA AKIFUMI |
分类号 |
H01L21/027;G03F7/09;G03F7/11;G03F7/26;G11B5/31;G11B5/39;(IPC1-7):G03F7/26 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|