METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of semiconductor devices is provided to easily control a diameter of contact holes and to improve an alignment margin by planarizing an interlayer dielectric using a plug. CONSTITUTION: After forming gates(34) on a semiconductor substrate(31), source and drain regions(36,36-1) are formed by implanting dopants using the gates as a mask. A first and a second contact holes are formed to expose the source and drain regions by depositing and patterning a first interlayer dielectric(37). A storage electrode(39) is filled into the second contact hole so as to connect to the drain region(36-1), and a dielectric film(40) is formed on the storage electrode(39). A plate electrode(41) is formed on the dielectric film(40) and a plug(42) is simultaneously formed into the first contact hole so as to connect to the source region(36). A second interlayer dielectric(43) having a third contact hole is formed on the resultant structure. A metal interconnection(45) is formed to connect to the plug(42).