发明名称 |
Method of fabricating field effect transistor |
摘要 |
A method of fabricating a field effect transistor, wherein a substrate with a gate is provided. A liner oxide layer and a first spacer are formed adjacent to the sides of the gate. An epitaxial silicon layer is formed at both sides of the gate in the substrate, while a shallow source/drain (S/D) extension junction is formed in the substrate below the epitaxial silicon layer. An oxide layer and a second spacer are formed to be closely connected to the first spacer and form the S/D region below the epitaxial silicon layer. A part of the epitaxial silicon layer is then transformed into a metal silicide layer, so as to complete the process of the field effect transistor.
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申请公布号 |
US2001010962(A1) |
申请公布日期 |
2001.08.02 |
申请号 |
US20010822438 |
申请日期 |
2001.03.30 |
申请人 |
CHEN TUNG-PO;CHOU JIH-WEN |
发明人 |
CHEN TUNG-PO;CHOU JIH-WEN |
分类号 |
H01L21/285;H01L21/336;H01L29/78;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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