发明名称 PHOTOCATALYST
摘要 A Ti-O-N film is formed on an SiP2 substrate by sputtering. For example, TiO2 is used as a target and nitrogen gas is introduced into the atmosphere. Crystallization is carried out by a post-sputtering heat treatment. Then a charge separation material such as Pt is deposited on the Ti-O-N film. With the thus fabricated TiL2 crystals, the Ti-O-N film containing nitrogen exhibits a good catalytic reaction by using visible light as acting light. Since the charge separation material captures electrons or positive holes, recombination of electrons and positive holes is effectively prevented, and consequently a more efficient photocatalytic reaction is performed. It is preferable to form a photocatalyst material film (Ti-Cr-O-N film) by sputtering the SiO2 substrate by use of TiO2 and Cr as the target in a nitrogen atmosphere. Crystallization is performed by a post-sputtering heat treatment.
申请公布号 WO0154811(A1) 申请公布日期 2001.08.02
申请号 WO2001JP00481 申请日期 2001.01.25
申请人 KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO;MORIKAWA, TAKESHI;SHIGA, TAKAHIRO;ASAHI, RYOJI;OHWAKI, TAKESHI;TAGA, YASUNORI 发明人 MORIKAWA, TAKESHI;SHIGA, TAKAHIRO;ASAHI, RYOJI;OHWAKI, TAKESHI;TAGA, YASUNORI
分类号 B01J21/06;B01J23/26;B01J27/24;B01J35/00;B01J37/34;(IPC1-7):B01J35/02 主分类号 B01J21/06
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