发明名称 |
Gallium phosphide semiconductor configuration and production method |
摘要 |
A semiconductor configuration has a substrate made of GaP and an epitaxial layer on the substrate. The expitaxial layer has an n-doped partial layer and a p-doped partial layer. A pn junction is formed at the boundary between the two partial layers. The epitaxial layer contains an impurity which is an element from the 3rd main group and/or from the 5th main group which is not identical to N. The impurity is present at a maximum concentration in the GaP epitaxial layer of between 1017 and 1018 cm-3.
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申请公布号 |
US2001010375(A1) |
申请公布日期 |
2001.08.02 |
申请号 |
US20000728682 |
申请日期 |
2000.12.04 |
申请人 |
NEUMANN GERALD;GRONNINGER GUNTHER;HEIDBORN PETER;SCHEMMEL GERALD |
发明人 |
NEUMANN GERALD;GRONNINGER GUNTHER;HEIDBORN PETER;SCHEMMEL GERALD |
分类号 |
C30B19/10;C30B29/44;H01L21/208;H01L33/00;H01L33/02;H01L33/30;(IPC1-7):H01L33/00;H01L21/00 |
主分类号 |
C30B19/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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