发明名称 SEMICONDUCTOR WAFER AND METHOD FOR PRODUCING THE SAME
摘要 A novel bonded semiconductor wafer having a multilayer structure where semiconductor layers and insulating layers are alternately formed in two or more cycles and produced by a bonding method, in which at least one of the insulating layers is an insulating layer into which oxygen ions are implanted. A novel method for producing a bonded semiconductor wafer using an ion implantation separating method is also disclosed. The semiconductor wafer is produced by a bonding method and has a multilayer structure where semiconductor layers and insulating layers are alternately formed in two or more cycles, and at least one of the insulating layers is an insulating layer in which oxygen ions are implanted.
申请公布号 WO0156085(A1) 申请公布日期 2001.08.02
申请号 WO2001JP00331 申请日期 2001.01.19
申请人 SHIN-ETSU HANDOTAI CO., LTD.;ABE, TAKAO;MATSUURA, TAKASHI;MUROTA, JUNICHI 发明人 ABE, TAKAO;MATSUURA, TAKASHI;MUROTA, JUNICHI
分类号 H01L21/265;H01L21/02;H01L21/762;H01L27/12;(IPC1-7):H01L27/12 主分类号 H01L21/265
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