| 摘要 |
A refractory metal layer is deposited onto a substrate having high aspect ratio contracts or vias formed thereon. Next, a plasma-enhanced CVD refractory metal nitride layer is deposited on the refractory metal layer. Then, a metal layer is deposited over the metal nitride layer. The resulting metal layer is substantially void free and has reduced resistivity, and has greater effective line width. Plasma-enhanced chemical vapor deposition of the metal nitride layer comprises forming a plasma of a metal-containing compound, a nitrogen-containing gas, and a hydrogen-gas to deposit a metal nitride layer on a substrate. The metal nitride layer is preferably treated with nitrogen plasma to densify the metal nitride film. The process is preferably carried out in an integrated processing system (400) that generally includes various chambers (402, 403, 405, 406, 407, 408, 409) so that once the substrate is introduced into a vacuum environment, the metallization of the vias and contacts occurs without exposure to possible contaminants. <IMAGE> |
