PURPOSE: A photoresist stripper composition is provided for efficiently and speedily removing photoresist from failed wafers or test wafers without causing damage or contamination to the substrate film by comprising particular solvents in the composition. CONSTITUTION: The photoresist stripper composition comprise a mixture comprising two components or more consisting of GBL(gamma-butyrolactone) as a main component and at least one solvent selected from NBA(n-butyl acetate), PGMEA(propylene glycol methyl ether acetate) and/or PGME(propylene glycol monomethyl ether) in a weight ratio of 1-9:9-1. The composition is introduced to a wafer rotating at 1000-3000 rpm by a spin coater for 1-5 minutes to remove the photoresist coated on the wafer. The photoresist removed wafer can be applied in the working process as it is or after baking treatment of the wafer at 80-130 deg.C for 60-120 second.
