发明名称 Gas flow rate measuring apparatus
摘要 <p>A power transistor (1) is mounted on a metallic power supply terminal (40) within an intake pipe (20), individually and separately from an electronic circuit board (7) on which other electronic circuit element are mounted. This power supply terminal (40) acts as a terminal for electric power input and its one portion is exposed within the gas path of the intake pipe (20). The heat-generation of the power transistor (1) is effectively heat-generated by the metallic terminal (40) without giving a remarkable effect to the other circuit elements. With this, it is possible to reduce any heat effect to the other electronic circuit components due to the self heat-generation of the power transistor (1) without the additional number of parts and to effectuate the gas flow rate measuring apparatus of which measuring accuracy and reliability are high. &lt;IMAGE&gt;</p>
申请公布号 EP1120634(A2) 申请公布日期 2001.08.01
申请号 EP20010101148 申请日期 2001.01.22
申请人 HITACHI, LTD.;HITACHI CAR ENGINEERING CO., LTD. 发明人 TASHIRO, SINOBU;IGARASHI, SHINYA;ISHIKAWA HITOSHI
分类号 G01F15/02;F02D35/00;F02D41/18;F02D41/30;G01F1/68;G01F1/684;(IPC1-7):G01F1/684 主分类号 G01F15/02
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