发明名称 |
Method for etching GaN material |
摘要 |
<p>A method for etching GaN material comprising configuring the GaN material as an anode in an electrochemical cell where the electrochemical cell is comprised of an anode, a cathode and an electrolyte, and applying a bias across the anode and the cathode to a level which is sufficient to induce etching of the material. The etch rate of the material is controllable by varying the bias level. The cell is additionally illuminated with a preselected level of UV light which provides for uniformity of the etching process. The present method is particularly useful for etching a GaN HBT from n-p-n GaN material.</p> |
申请公布号 |
EP1120483(A2) |
申请公布日期 |
2001.08.01 |
申请号 |
EP20010100168 |
申请日期 |
2001.01.16 |
申请人 |
TRW INC. |
发明人 |
BARSKY, MICHAEL E;SANDHU, RAJINDER R.;WOJTOWICZ, MICHAEL |
分类号 |
C25F3/12;H01L21/3063;H01L21/331;H01L29/737;(IPC1-7):C25F3/12;H01L29/10 |
主分类号 |
C25F3/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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