发明名称 FERROELECTRIC RECORDING MEDIUM AND FABRICATING METHOD THEREOF
摘要 PURPOSE: A ferroelectric recording medium and a method for fabricating thereof are provided to form an upper electrode on the ferroelectric recording medium and to deposit an insulated layer on the recording medium to form a flat surface by using a CMP(Chemical Mechanical Polishing). Therefore, a recording maintenance characteristic and reading/writing speeds are improved. CONSTITUTION: A lower electrode is formed on a substrate. A ferroelectric layer is formed on the lower electrode. Upper electrodes are formed on predetermined areas of the ferroelectric layer. An insulated layer is formed on the ferroelectric layer between the upper electrodes. A buffer layer is formed between the substrate and the lower electrode.
申请公布号 KR20010073306(A) 申请公布日期 2001.08.01
申请号 KR20000001570 申请日期 2000.01.13
申请人 LG ELECTRONICS INC. 发明人 NAM, HYO JIN
分类号 G11B11/10;(IPC1-7):G11B11/10 主分类号 G11B11/10
代理机构 代理人
主权项
地址