METHOD FOR REMOVING POLYSILICON STRINGER AND METHOD FOR FORMING STORAGE ELECTRODE OF CAPACITOR OF SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method for removing a polysilicon stringer and a method for forming a storage electrode of a capacitor of a semiconductor device using the same are provided to maintain an excellent uniformity of a pattern of a polysilicon layer and at the same time eliminate a polysilicon stringer. CONSTITUTION: A dielectric pattern(26) is formed on a semiconductor substrate(25). A polysilicon layer(27) is formed on the semiconductor substrate(25) by using polysilicon. The polysilicon layer is etched to form a polysilicon layer pattern(27a). An etching gas has an etching ratio of the polysilicon layer pattern(27a) and the dielectric pattern(26) within a range of 4.0 to 6.5: 1. The etching gas is used for the etching process. A polysilicon stringer(28) which is generated when the polysilicon layer pattern is formed is removed. The polysilicon stringer applies a power of 500 to 1,100W under a temperature of 30 to 50 degrees C. and at a pressure of 400 to 1,000mTorr. The etching gas includes He which has a flow rate of 400 to 600sccm, O2 which has a flow rate of 10 to 30sccm and NF3 which has a flow rate of 10 to 15sccm.