发明名称 |
PROCESSING CHAMBER OF SEMICONDUCTOR MANUFACTURING EQUIPMENT |
摘要 |
PURPOSE: A processing chamber of semiconductor manufacturing equipment is provided to improve thin film uniformity on a semiconductor wafer. CONSTITUTION: A process for depositing a thin film on a surface of a semiconductor wafer is proceeded in a processing chamber(10). A susceptor(20) has stages on which semiconductor wafers(50) are placed. A shower head(12) injects a reacting gas to the semiconductor wafer(50) placed on the susceptor(12). A heating apparatus(30) heats the susceptor(20). A lift apparatus loads and unloads the semiconductor wafer(50) from the stages of the susceptor(20). The susceptor(20) is structured into a double type having the first stage(22a) and the second stage(22b). The first stage(22a) and the second stage(22b) of the susceptor(20) are independently heated by heaters(32,34) which are separately installed. Temperatures of the first and second stages are individually controlled. The heaters(32,34) are installed on pertinent portions of the first stage(22a) and the second stage(22b) of the susceptor(20). As a result, the susceptor(20) of double type can minimize ununiformity in temperature. Since the temperature of the susceptor(20) is uniform, uniform heat is transferred to the semiconductor wafer(50) and thus uniformity of the thin film deposited on the surface of the semiconductor wafer(50) is improved.
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申请公布号 |
KR20010073562(A) |
申请公布日期 |
2001.08.01 |
申请号 |
KR20000002183 |
申请日期 |
2000.01.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG, YEONG BU;KIM, SEONG SU |
分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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