Method of programming a non-volatile memory cell using a current limiter

摘要

A memory cell that includes a substrate that has a first region and a second region with a channel therebetween, wherein the first region generates hot carriers. The memory cell further includes a gate above the channel and a charge trapping region that contains a first amount of charge. A current limiter that limits the number of the generated hot carriers that can flow into the channel, wherein the current limiter does not control the voltage of the second region.