发明名称 |
Self-planarizing low-temperature doped-silicate-glass process capable of gap-filling narrow spaces |
摘要 |
A low-temperature pre-metal dielectric deposition process using phosphine-based chemistry in a high-density plasma chemical-vapor deposition technique. The process uses a phosphorous-doped oxide of up to 3.5 percent (wt) deposited at less than 350 degrees C. capable of filling 0.4 micron spaces between poly-silicon gates without microvoids.
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申请公布号 |
US6268297(B1) |
申请公布日期 |
2001.07.31 |
申请号 |
US19980196725 |
申请日期 |
1998.11.20 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
NAG SOMNATH S.;SHINN GREGORY B.;DIXIT GIRISH A. |
分类号 |
H01L21/3205;C23C16/50;C23C16/505;H01L21/3105;H01L21/316;H01L21/768;(IPC1-7):H01L21/469 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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