发明名称 |
Semiconductor light emitting device |
摘要 |
By providing an area where an Au film 28b is removed and a Ti film 28a is exposed along the plane tangent to the side where the p-n junction of a semiconductor chip is exposed, sticking of the Au film 28b to the chip side or protruding of the film as a flash from the side is prevented, which normally provides a starting place for creep of a solder 42 on the chip side, which in turn causes p-n junction short-circuiting when dividing of chips.
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申请公布号 |
US6268230(B1) |
申请公布日期 |
2001.07.31 |
申请号 |
US19990421324 |
申请日期 |
1999.10.18 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
KUNIYASU TOSHIAKI |
分类号 |
H01L33/06;H01L33/40;H01S5/00;H01S5/042;(IPC1-7):H01L21/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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