| 摘要 |
The invention encompasses methods of treating semiconductive material wafers and ingots to alleviate slippage within monocrystalline lattices of the wafers and ingots. The invention further encompasses monocrystalline semiconductive material wafers and monocrystalline semiconductive ingots which are treated to alleviate slippage within a crystalline lattice of the wafers and ingots. In one aspect, the invention includes a method of forming a semiconductive material wafer comprising: a) forming an ingot of semiconductive material, said ingot comprising an outer periphery; b) forming a wafer from the ingot, the wafer comprising said outer periphery; and c) doping said outer periphery with strength-enhancing dopant atoms. In another aspect, the invention includes a method of forming a semiconductive material wafer comprising: a) forming an ingot of semiconductive material, said ingot comprising an outer periphery; b) implanting a stacking fault inducing material into the ingot to form stacking faults proximate the outer periphery of the ingot; and c) forming a wafer from the ingot, the wafer comprising the stacking faults. In another aspect, the invention includes an ingot of semiconductive material comprising: a) an outer periphery region which comprises an outer boundary of the ingot; and b) strength-enhancing dopant atoms provided within the outer periphery region.
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