发明名称 |
Vertical channel field effect transistor |
摘要 |
A vertical channel field effect transistor and a process of manufacturing the same. The vertical channel field effect transistor is disposed on a surface of a substrate and comprises an epitaxial silicon stack having a bottom terminal comprising heavily doped silicon, a channel comprising lightly doped silicon of opposite doping type from the bottom terminal, and a top terminal comprising heavily doped silicon of the same doping type as the bottom terminal. The vertical channel field effect transistor also comprises a gate dielectric layer covering at least a portion of the bottom terminal, the channel, and the top terminal, and a gate in contact with the gate dielectric layer. The gate is positioned adjacent the channel and adjacent at least a portion of the bottom terminal and top terminal. The channel has a thickness between the bottom terminal and the top terminal from about 50 angstroms to about 800 angstroms.
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申请公布号 |
US6268621(B1) |
申请公布日期 |
2001.07.31 |
申请号 |
US19990366147 |
申请日期 |
1999.08.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EMMI PETER A.;PARK BYEONGJU |
分类号 |
H01L29/772;H01L21/336;H01L21/84;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L27/108;H01L29/76;H01L29/94 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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