发明名称 |
Area array air gap structure for intermetal dielectric application |
摘要 |
A new method of forming air gaps between adjacent conducting lines of a semiconductor circuit by using a "holes everywhere" or a "reverse metal holes" mask that can be used to create holes in a dielectric layer. The dielectric that is being etched has been deposited across conducting lines, the holes that are being formed in this manner are closed by depositing a dielectric across the top of the holes. The holes can be etched across the entire layer of the deposited dielectric or can be etched in between the conducting lines.
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申请公布号 |
US6268276(B1) |
申请公布日期 |
2001.07.31 |
申请号 |
US19980216823 |
申请日期 |
1998.12.21 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD.;NANYANG TECHNOLOGICAL UNIVERSITY OF SINGAPORE |
发明人 |
CHAN LAP;TEE KHENG CHOK;ONG KOK KENG;SEAH CHIN HWEE |
分类号 |
H01L21/768;(IPC1-7):H01L21/476;H01L21/76 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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