发明名称 Semiconductive glass composition exhibiting negative incremental resistance
摘要 1,145,639. Semi-conducting glass. ITT INDUSTRIES Inc. 15 Dec., 1967 [21 Dec., 1966], No.57000/67. Heading C1M. [Also in Divisions C7, H1 and H3] A semi-conducting glass consists of As, Te and Se and has a composition within the shaded area A in Fig. 1. The glass has a voltage-current characteristic including a region of relatively high resistance, a region of negative incremental resistance and a region of relatively low resistance. A non-rectifying solid state element is made from the glass by applying two spaced metallic contacts (e.g. of iron, nickel or tungsten) to a body thereof and held by resilient S-shaped pressure contact. The glasses are prepared by mixing dry in a N 2 atmosphere and then sealed under vacuum in a quartz vial which is heated to 900‹ C.
申请公布号 GB1145639(A) 申请公布日期 1969.03.19
申请号 GB19670057000 申请日期 1967.12.15
申请人 ITT INDUSTRIES, INC. 发明人
分类号 C03C3/32;H01C7/108;H01L45/00;H03K3/02 主分类号 C03C3/32
代理机构 代理人
主权项
地址
您可能感兴趣的专利