发明名称 |
Method for forming enhanced FOX region of low voltage device in high voltage process |
摘要 |
A method for forming enhanced field oxide (FOX) region of low voltage devices in a high voltage process is disclosed. The method includes providing a semiconductor structure comprising a substrate, two field oxide regions on the substrate, a well between the two field oxide regions in the substrate and a silicon nitride layer between the two field oxide regions above the well. As a key step, nitrogen is implanted into the semiconductor structure, and the silicon nitride layer is then removed. Then, a gate oxide layer on the well and silicon oxynitride layer on the field oxide regions are all formed in-situ.
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申请公布号 |
US6268266(B1) |
申请公布日期 |
2001.07.31 |
申请号 |
US19990425600 |
申请日期 |
1999.10.22 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HWANG CHING-CHUN;CHEN FEI-HUNG;TSAI MENG-JIN;CHEN WEI-CHUNG |
分类号 |
H01L21/762;H01L21/8234;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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