Integrated circuit devices and methods employing amorphous silicon carbide resistor materials,申请号US19990461693-传众专利搜索

发明名称	Integrated circuit devices and methods employing amorphous silicon carbide resistor materials
摘要	Integrated circuits, including field emission devices, have a resistor element of amorphous SixC1-x wherein 0<x<1, and wherein the SixC1-x incorporates at least one impurity selected from the group consisting of hydrogen, halogens, nitrogen, oxygen, sulphur, selenium, transition metals, boron, aluminum, phosphorus, gallium, arsenic, lithium, beryllium, sodium and magnesium.
申请公布号	US6268229(B1)	申请公布日期	2001.07.31
申请号	US19990461693	申请日期	1999.12.14
申请人	ADVANCED TECHNOLOGY MATERIALS, INC.;SILICON VIDEO CORPORATION	发明人	BRANDES GEORGE R.;BEETZ CHARLES P.;XU XUEPING;RAMANI SWAYAMBU V.;BESSER RONALD S.
分类号	H01J9/02;H01J1/304;H01J19/24;H01J21/10;H01J29/04;H01J31/12;H01L21/02;H01L21/822;H01L27/04;H01L31/0376;(IPC1-7):H01L21/00	主分类号	H01J9/02
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