| 摘要 |
A gate driving circuit for power semiconductor switch includinga DC voltage source whose positive output terminal is connected to a cathode of a power semiconductor switch, a series circuit of a reactor and a turn-on switching element connected across the positive output terminal of the DC voltage source and a gate of the power semiconductor switch,a turn-off switching element connected across the gate of the power semiconductor switch and a negative output terminal of the DC voltage source, a freewheel diode connected across the negative output terminal of the DC voltage source and a junction point between the turn-on switching element and the reactor, and a control circuit for controlling the turn-on and turn-off switching elements such that the power semiconductor switch is kept non-conductive by making the first and second switching elements in off-state and in on-state, respectively, upon turning-on the power semiconductor switch, after storing energy in said reactor by changing the first switching element from off-state into on-state, the second switching element is changed into the off-state to discharge the energy stored in the reactor abruptly into the gate of the power semiconductor switch.
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