Method for fabricating a memory cell

摘要

A method for fabricating a memory cell includes forming a first access line (16) for a storage node (140, 210) and forming a second access line (82) operable to access the storage node (140, 210) in connection with the first access line (16). The first access line (16) includes a first terminal (32) and a second terminal (34). The second access line (82) includes a conductive layer (70) connected to the first terminal (32) of the first access line (16). An opening (88) is formed in the second access line (82) for connection of the storage node (140, 210) to the second terminal (34) of the first access line (16). A sidewall (92) is formed in the opening (88) to form a contact hole (94) insulated from the conductor (70) of the second access line (82). The storage node (140, 210) is formed having a self-aligned contact (102) formed in the contact hole (94) and connected to the second terminal (34) of the first access line (16).