| 摘要 |
A improved thin film recording medium with an underlayer with deliberately induced strain, crystalline defects and dislocations (collectively "faults") in the grain structure is described. The relatively high number of induced faults results in surprising improvements in recording characteristics such as soft error rate, resolution and SNR of the thin film disk. While the film is being deposited, the sputtering conditions are controlled to grow grains of the underlayer material which tend to be highly faulted by incorporation of atoms of a second material with significantly different atomic characteristics than the underlayer material. Preferably the atoms of the sputtering gas species are incorporated in the film to cause the lattice faults. For example, the faults can be achieved by incorporating sputtering gas atoms, e.g. argon atoms, into a chromium based underlayer.
|
